JPH0467336B2 - - Google Patents

Info

Publication number
JPH0467336B2
JPH0467336B2 JP55084885A JP8488580A JPH0467336B2 JP H0467336 B2 JPH0467336 B2 JP H0467336B2 JP 55084885 A JP55084885 A JP 55084885A JP 8488580 A JP8488580 A JP 8488580A JP H0467336 B2 JPH0467336 B2 JP H0467336B2
Authority
JP
Japan
Prior art keywords
crystal semiconductor
single crystal
semiconductor layer
insulating film
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP55084885A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5710267A (en
Inventor
Junji Sakurai
Atsuo Iida
Kunihiko Wada
Motoo Nakano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8488580A priority Critical patent/JPS5710267A/ja
Publication of JPS5710267A publication Critical patent/JPS5710267A/ja
Publication of JPH0467336B2 publication Critical patent/JPH0467336B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H10D30/6759—Silicon-on-sapphire [SOS] substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/611—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/637—Lateral IGFETs having no inversion channels, e.g. buried channel lateral IGFETs, normally-on lateral IGFETs or depletion-mode lateral IGFETs

Landscapes

  • Recrystallisation Techniques (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP8488580A 1980-06-23 1980-06-23 Semiconductor device Granted JPS5710267A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8488580A JPS5710267A (en) 1980-06-23 1980-06-23 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8488580A JPS5710267A (en) 1980-06-23 1980-06-23 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5710267A JPS5710267A (en) 1982-01-19
JPH0467336B2 true JPH0467336B2 (en]) 1992-10-28

Family

ID=13843210

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8488580A Granted JPS5710267A (en) 1980-06-23 1980-06-23 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5710267A (en])

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58153850A (ja) * 1982-03-08 1983-09-13 極東鋼弦コンクリ−ト振興株式会社 リング状ｐｃ鋼材の緊張・定着用ブロツク
US5753542A (en) * 1985-08-02 1998-05-19 Semiconductor Energy Laboratory Co., Ltd. Method for crystallizing semiconductor material without exposing it to air
US5962869A (en) * 1988-09-28 1999-10-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material and method for forming the same and thin film transistor
US5264720A (en) * 1989-09-22 1993-11-23 Nippondenso Co., Ltd. High withstanding voltage transistor
JPH06151859A (ja) * 1992-09-15 1994-05-31 Canon Inc 半導体装置
JP2891325B2 (ja) * 1994-09-01 1999-05-17 日本電気株式会社 Ｓｏｉ型半導体装置およびその製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5513947A (en) * 1978-07-17 1980-01-31 Seiko Epson Corp Semiconductor integrated circuit device

Also Published As

Publication number Publication date
JPS5710267A (en) 1982-01-19

Similar Documents

Publication Publication Date Title
JPH0451071B2 (en])
JP2775503B2 (ja) 接合ゲート型電界効果トランジスタの製造方法
JPH0147897B2 (en])
JPH0467336B2 (en])
US6884665B2 (en) Method for manufacturing thin film transistor
JPH02864B2 (en])
JPH02126634A (ja) 半導体装置の製造方法および製造装置
JPS5885520A (ja) 半導体装置の製造方法
JPS643046B2 (en])
JPS5837934A (ja) 半導体装置の製造方法
JPH0231468A (ja) 浮遊ゲート型半導体記憶装置の製造方法
JP2771812B2 (ja) 半導体装置の製造方法
JPH0345530B2 (en])
JPS6317227B2 (en])
JPH02863B2 (en])
JPS62154622A (ja) 半導体装置の製造方法
JPH02194561A (ja) 薄膜半導体装置とその製造方法
JPH0247853B2 (en])
JPS6169176A (ja) 半導体装置の製造方法
JPS60126814A (ja) 半導体装置の製造方法
JPS6364892B2 (en])
JPS6060748A (ja) 半導体装置の製造方法
JPH03154378A (ja) 耐放射線半導体装置の製造方法
JPS5825222A (ja) 半導体装置の製造方法
JPS59210659A (ja) Ｍｏｓ半導体装置の製造法